In this paper, we discuss the reliability evaluation and qualification results of a small (~ 256b) pFET based floating gate nonvolatile memory for embedded application in a UHF RFID chip that is being volume produced using a foundry logic CMOS process. The memory is based on bi-directional Fowler-Nordheim tunneling using a ~65-70 Aring oxide that is available from typical foundry processes with 3.3V I\/O transistors. Well over one year of retention bake data are reported to show that the memory is reliable for the required applications<\/p>\n","protected":false},"excerpt":{"rendered":"
In this paper, we discuss the reliability evaluation and qualification results of a small (~ 256b) pFET based floating gate nonvolatile memory for embedded application in a UHF RFID chip that is being volume produced using a foundry logic CMOS process. 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