A generalized charge pumping model has been developed which extends the use of charge pumping from a study of traps at the Si-SiO\/sub 2\/ interface to a study of traps in the oxide. The analytical model, based on tunneling theory, allows the spatial distribution of near-interface oxide traps to be determined from variable frequency charge pumping data. Profiling of near-interface oxide traps in irradiated MOSFET’s as well as SONOS nonvolatile memory devices is presented.<\/p>\n","protected":false},"excerpt":{"rendered":"
A generalized charge pumping model has been developed which extends the use of charge pumping from a study of traps at the Si-SiO\/sub 2\/ interface to a study of traps in the oxide. 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